US Patent Issued to Yangtze Memory Technologies on Oct. 28 for "Memory device and methods of erasure operation using different float times for string selection transistors" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,522, issued on Oct. 28, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and methods of erasure operation using different float times for string selection transistors" was invented by SongMin Jiang (Hubei, China), HongTao Liu (Hubei, China), Ying Huang (Hubei, China) and Lei Guan (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory, a memory system and a method of operating the memory are disclosed, belonging to the field of storage technologies. When an erase operation is performed on various strings in the block of the memory, if there are a first string that has been erased and a second string t...