ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,092, issued on Oct. 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Semiconductor device and fabrication method therefor" was invented by Bingjie Yan (Hubei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a memory system, a semiconductor device and fabrication method for the semiconductor device. The semiconductor device includes a memory stack with gate layers and insulating layers, and the gate layers and the insulating layers are stacked alternatingly. The semiconductor device also includes a first channel structure formed in a first channel hole in the memory stack. The first chan...