US Patent Issued to Yangtze Memory Technologies on Oct. 21 for "Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two steps" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,094, issued on Oct. 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two steps" was invented by Zhen Guo (Hubei, China), Wei Xu (Hubei, China), ZhiPeng Wu (Hubei, China), XiaoFen Zheng (Hubei, China), Yuan Yuan (Hubei, China), Lei Li (Hubei, China), Lei Xue (Hubei, China) and ZongLiang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a stack of alternating insulating layers and sacrificial layers over a substrate; forming a trench through the stack to uncover the substrate to expose la...