ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,193, issued on Oct. 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).
"Memory system, memory and memory control method" was invented by Yi Cao (Hubei, China), Ke Liang (Hubei, China) and Liang Qiao (Hubei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Devices, systems, and methods for counting a quantity of fail-bits in a memory device using a VFC circuit are disclosed. The VFC circuit can be calibrated via an offset adjustment mechanism to compensate an internal mismatch. The VFC circuit can include a processing unit and a circuit coupled to the processing unit. The processing unit can receive a first signal representi...