US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 21 for "Memory programming method, memory device, and memory system" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,188, issued on Oct. 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory programming method, memory device, and memory system" was invented by Xiangnan Zhao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a memory programming method, a memory device, and a memory system. The method comprises: performing a plurality periods of first increment step pulse programming (ISPP) on first memory cells to be programmed to a first programmed state, comprising: at a first stage of a first period of the first ISPP, performing programming suppression to the first memory cells; and at a sec...