US Patent Issued to Yangtze Memory Technologies on Oct. 21 for "Memory devices and operation methods thereof, and memory systems and storage mediums" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,449,992, issued on Oct. 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices and operation methods thereof, and memory systems and storage mediums" was invented by Shu Xie (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory device and an operation method thereof, a memory system and a storage medium. The memory device includes: a memory cell array, and a peripheral circuit coupled with the memory cell array, wherein the peripheral circuit is configured to: before performing a power on reset operation, set all state information of a plurality of main memory a...