US Patent Issued to Yangtze Memory Technologies on Oct. 14 for "Three-dimensional memory devices having a cylindrical body and plate line contact segments" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,679, issued on Oct. 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three-dimensional memory devices having a cylindrical body and plate line contact segments" was invented by Yuancheng Yang (Hubei, China), DongXue Zhao (Hubei, China), Tao Yang (Hubei, China), Lei Liu (Hubei, China), Di Wang (Hubei, China), Kun Zhang (Hubei, China), Wenxi Zhou (Hubei, China), ZhiLiang Xia (Hubei, China) and ZongLiang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional memory devices are disclosed. A disclosed memory structure can comprises a memory cell, a bit line contact coupled to the memory ...