US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 14 for "Semiconductor devices and methods for manufacturing the same, and NAND memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,265, issued on Oct. 14, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Semiconductor devices and methods for manufacturing the same, and NAND memory devices" was invented by Lan Yao (Wuhan, China), Ziqun Hua (Wuhan, China) and Yanwei Shi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for manufacturing the same, and a NAND memory device are disclosed. The method comprises: forming a substrate that comprises a first active region and an isolation region; forming a first groove between the isolation region and the first channel region, the first groove being partially located in t...