US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 14 for "Memory device and operating method thereof, memory system and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,443,522, issued on Oct. 14, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and operating method thereof, memory system and operating method thereof" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China) and Lu Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application disclose a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; peripheral circuit coupled to the array of memory cells and configured to: obtain the first state corresponding to at least one co...