US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Oct. 14 for "3D NAND memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,217, issued on Oct. 14, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"3D NAND memory device and method of forming the same" was invented by Ruo Fang Zhang (Wuhan, China), Enbo Wang (Wuhan, China), Haohao Yang (Wuhan, China), Qianbing Xu (Wuhan, China), Yushi Hu (Wuhan, China) and Fushan Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a three-dimensional memory device, an interconnect structure is formed over a substrate and a first deck is formed over the interconnect structure. The first deck includes alternating first insulating layers and first word line layers, and a first channel structure extending...