US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 4 for "Method for programming a memory device to reduce retention error" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,886, issued on Nov. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Method for programming a memory device to reduce retention error" was invented by Haibo Li (Wuhan, China), Man Lung Mui (Wuhan, China) and Yu Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The plurality of memory cells includes a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state. The control c...