US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 4 for "Memory device and operation method with optimized read level" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,874, issued on Nov. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and operation method with optimized read level" was invented by Xiaojiang Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes memory cells coupled to a same word line and bit lines, respectively, and a peripheral circuit coupled to the memory cells through the word and bit lines. Each memory cell is in one state. The peripheral circuit is configured to determine a first number of a first set of the memory cells and a second number of a second set of the memory cells in parallel. Threshold voltages of the fir...