US Patent Issued to Yangtze Memory Technologies on Nov. 4 for "Hybrid wafer bonding method and structure thereof" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,177, issued on Nov. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Hybrid wafer bonding method and structure thereof" was invented by Meng Yan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first via structure in a first dielectric layer, the first via structure including a first contact via surface. At least a portion of the first via structure is in direct contact with the first dielectric layer. The second semiconductor structure includes a second via structure...