US Patent Issued to Yangtze Memory Technologies on Nov. 25 for "Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,226, issued on Nov. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits" was invented by Longxiang Yan (Wuhan, China), Wei Xu (Wuhan, China), Bo Xu (Wuhan, China), Fazhan Wang (Wuhan, China), Lei Xue (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits are provided. The method includes: forming a gate line slit through a plurality of alternating layers of an oxide layer and a conductive materi...