US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 25 for "Three-dimensional memory and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,220, issued on Nov. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory and fabrication method thereof" was invented by Simin Liu (Wuhan, China), Zongliang Huo (Wuhan, China), Wei Xu (Wuhan, China), Bo Xu (Wuhan, China), Yali Guo (Wuhan, China), Bin Chen (Wuhan, China), Siliu Zhang (Wuhan, China) and Jie Su (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a three-dimensional memory and a fabrication method thereof. The fabrication method comprises: forming a stack structure comprising alternately stacked dielectric layers and sacrificial layers; forming a gat...