ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,786, issued on Nov. 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Hybrid wafer bonding method" was invented by Meng Yan (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A hybrid wafer bonding method includes providing a first semiconductor structure and providing a second semiconductor structure. The first semiconductor structure includes a first via structure in a first dielectric layer, the first via structure including a first contact via surface. The second semiconductor structure includes a second via structure in a second dielectric layer, the second via structure including a second contact via surface. ...