US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 18 for "Three-dimensional memory devices having semiconductor assemblies bonded by bonding layer and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,749, issued on Nov. 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices having semiconductor assemblies bonded by bonding layer and methods for forming the same" was invented by Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Wei Liu (Wuhan, China), Zhiliang Xia (Wuhan, China), Liang Chen (Wuhan, China) and Yanhong Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor assembly, a second semiconductor assembly, and an inter-as...