US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 11 for "Three-dimensional memory devices, systems, and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,286, issued on Nov. 11, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices, systems, and methods for forming the same" was invented by Wenshan Xu (Wuhan, China) and Xin Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional 3D memory device includes a substrate, a peripheral device disposed on the substrate, a memory stack disposed above the peripheral device and including a plurality of conductor/dielectric layer pairs, and a plurality of memory strings, each of the memory strings extending through the memory stack. The peripheral device includes at least a transisto...