US Patent Issued to Yangtze Memory Technologies on Nov. 11 for "Three-dimensional memory device with charge trap layer including carbon region and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,278, issued on Nov. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory device with charge trap layer including carbon region and fabrication method thereof" was invented by Qiguang Wang (Wuhan, China), Hao Pu (Wuhan, China), Tuo Li (Wuhan, China) and Yingjie Zhao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a layer stack, a channel hole, a blocking layer, a charge trap layer, a tunnel insulation layer, and a channel layer. The surface region of the charge trap layer ...