US Patent Issued to Yangtze Memory Technologies on Nov. 11 for "Semiconductor device, memory and storage system" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,272, issued on Nov. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor device, memory and storage system" was invented by Hao Zhang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active layer having a first side and a second side, a bit line layer having a first bit line sub-layer disposed on the first side and a second bit line sub-layer disposed on the second side, and capacitor structures. The active layer includes active units arranged in an array and disposed at intervals. The first and second bit line sub-layers are connected with the active units. The capaci...