US Patent Issued to Yangtze Memory Technologies on Nov. 11 for "Method for programming memory device, memory device and memory system" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,561, issued on Nov. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method for programming memory device, memory device and memory system" was invented by Yu Wang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a programming method, a memory device and a memory system. The method includes, based on coupling offsets, dividing target programmed states into N groups, each group corresponding to a different first programmed state, wherein an i-th group has Ki number of different target programmed states and corresponds to an i-th first programmed state. At least two groups of target ...