US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Nov. 11 for "Memory device, memory system, and method of operating the same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,572, issued on Nov. 11, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and method of operating the same" was invented by Jinchi Han (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, memory system, and a method of operating the same are provided. The method for operating the memory device, includes storing first page data in a cache latch, storing the first page data in a first data latch and storing last page data in a second data latch, programming memory cells of a first page of a memory array with the first page data, storing the first page data in the second data la...