US Patent Issued to Yangtze Memory Technologies on Nov. 11 for "Input/output reference voltage training method in three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,551, issued on Nov. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Input/output reference voltage training method in three-dimensional memory devices" was invented by Shiyang Yang (Hubei, China), Chunfei Deng (Hubei, China), Yan Lu (Hubei, China), Ling Ding (Hubei, China) and Xiang Fu (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for input/output voltage training of a three-dimensional (3D) memory device is disclosed. The method can comprise the following operations: (1) setting a reference voltage value at an on-die termination (ODT) enabled status; (2) controlling the 3D memory device to perform a ...