US Patent Issued to Yangtze Memory Technologies on Nov. 11 for "Gateline mask design for removing sacrificial gateline polysilicon within stair step area" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,714, issued on Nov. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Gateline mask design for removing sacrificial gateline polysilicon within stair step area" was invented by Beibei Li (Hubei, China), Wei Xu (Hubei, China), Bin Yuan (Hubei, China), Zongke Xu (Hubei, China), XiangNing Wang (Hubei, China) and ZongLiang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack of alternating word line layers and insulating layers. The stack includes a core area, a stair step area, and, optionally, a dummy transition area connecting the core area to the stair step area. The semicon...