US Patent Issued to Yangtze Memory Technologies on Nov. 11 for "Channel structures for three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,279, issued on Nov. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Channel structures for three-dimensional memory devices and methods for forming the same" was invented by Xiaolong Du (Hubei, China), Wanbo Geng (Hubei, China), Zhiliang Xia (Hubei, China), Xiaoxin Liu (Hubei, China), Tingting Gao (Hubei, China) and Changzhi Sun (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a three-dimensional memory device includes forming an alternating dielectric stack on a substrate and forming an opening extending partially through the alternating dielectric stack. The opening exposes sidewalls of th...