US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 6 for "Method for reading memory, a memory, a memory system, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,786, issued on May 6, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Method for reading memory, a memory, a memory system, and electronic device" was invented by Zhuqin Duan (Wuhan, China) and Xiaojiang Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes applying a first read voltage to a word line corresponding to a first word line address in a first read request instruction. The method also includes detecting an obtained second read request instruction. The method further includes when the second word line address included in the second read request instruction is the same as the first word lin...