US Patent Issued to Yangtze Memory Technologies on May 27 for "Three-dimensional memory device and fabrication method for enhanced reliability" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,491, issued on May 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory device and fabrication method for enhanced reliability" was invented by Qiguang Wang (Wuhan, China), Hao Pu (Wuhan, China) and Jinhao Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a dielectric stack over a substrate, forming a functional layer and a semiconductor channel through the dielectric stack, forming a conductor/insulator stack based on the dielectric stack, and forming memory cells throu...