US Patent Issued to Yangtze Memory Technologies on May 27 for "Memory device and program operation thereof to reduce capacitive coupling" (Chinese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,577, issued on May 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and program operation thereof to reduce capacitive coupling" was invented by Yu Wang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a memory device comprising: a memory cell array having a plurality of rows of memory cells; a plurality of word lines coupled to the plurality of rows of memory cells respectively; wherein the memory device is configured to perform programming operations on a target memory cell in the plurality of rows of memory cells, wherein during the programming operations: applying a programming volt...