US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 27 for "Memory device and program operation thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,568, issued on May 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and program operation thereof" was invented by Huangpeng Zhang (Wuhan, China), Zhichao Du (Wuhan, China), Ke Jiang (Wuhan, China), Cong Luo (Wuhan, China) and Daesik Song (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes memory cells, word lines coupled to the memory cells, and a peripheral circuit coupled to the memory cells. The peripheral circuit is coupled to the word lines and configured to apply program pulses to a selected word line of the word lines in a program operation, obtain a...