ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,802, issued on May 27, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Memory device and fabrication method thereof" was invented by Zhong Zhang (Wuhan, China), Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China) and Zhiliang Xia (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stack structure and a first beam structure. The memory device includes array regions and an intermediate region arranged between the array regions in a first lateral direction. The stack structure includes a first block and a second block arranged in a second lateral direction. Each of the first block and the second...