US Patent Issued to Yangtze Memory Technologies on May 27 for "Memory and controlling method thereof, memory system and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,496, issued on May 27, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory and controlling method thereof, memory system and electronic device" was invented by Tao Yang (Hubei, China), Dongxue Zhao (Hubei, China), Wenxi Zhou (Hubei, China) and Zhiliang Xia (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory, a controlling method thereof, a memory system and an electronic device are disclosed. The memory can include a semiconductor layer and a memory array disposed on the semiconductor layer. The memory array can include a plurality of memory strings connected with the same bit line. Each memory string can i...