US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 20 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,011, issued on May 20, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Kun Zhang (Wuhan, China) and Wenxi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure including interleaved conductive layers and dielectric layers, a channel structure extending through the stack structure, and a doped semiconductor layer including a plate and a plug extending from the plate into the channel str...