US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,648, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Yuancheng Yang (Wuhan, China), Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China), Liang Chen (Wuhan, China), Yanhong Wang (Wuhan, China) and Wei Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first and the second semiconductor structures. The first semiconducto...