US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "Three-dimensional memory device with divided drain select gate lines and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,560, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device with divided drain select gate lines and method for forming the same" was invented by Di Wang (Wuhan, China), Yan Gu (Wuhan, China), Zhiliang Xia (Wuhan, China), Wenxi Zhou (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stack structure over a substrate, a channel structure extending in the stack structure, and a dielectric layer over the channel structure. The dielectric layer includes a first material. The memory device may also include a drain-select g...