US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "Three-dimensional memory and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,559, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory and method for manufacturing the same" was invented by Zongke Xu (Wuhan, China), Bin Yuan (Wuhan, China), Qiangwei Zhang (Wuhan, China) and Bo Xu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a three-dimensional memory and a method for manufacturing the same. The three-dimensional memory includes a gate stack structure including a core area and a step area which are disposed in juxtaposition and in direct contact in a first direction; a dummy separation structure penetrating through th...