US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "Three-dimensional memory and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,558, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory and manufacturing method thereof" was invented by Zhong Zhang (Wuhan, China), Yuhui Han (Wuhan, China), Cuicui Kong (Wuhan, China) and Kun Zhang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory includes a stack structure, a dummy structure and a gate line slit. The stack structure includes gate line layers and isolation layers stacked alternatively in the vertical direction. The dummy structure includes a first dummy section and a second dummy section. The gate line slit has one end extending in...