US Patent Issued to Yangtze Memory Technologies on May 13 for "Method of improving program operation speed in 3D NAND systems" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,323, issued on May 13, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method of improving program operation speed in 3D NAND systems" was invented by Ying Huang (Hubei, China), Hongtao Liu (Hubei, China), Yuanyuan Min (Hubei, China) and Junbao Wang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an aspect, a memory device comprises a memory configured to store a program code and a processor. The processor is configured to perform a first programming to a first cell of the memory device by incremental step pulse programming (ISPP) with a first step voltage. The processor is further configured to perform a second...