US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "Memory device, memory system, and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,327, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and operation method thereof" was invented by Jialiang Deng (Wuhan, China), Xiaojiang Guo (Wuhan, China) and Bo Li (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes a plurality of memory cells and a peripheral circuit coupled to the plurality of memory cells. The peripheral circuit includes a page buffer, which includes a page buffer circuit and control logic coupled to the page buffer circuit. The page buffer circuit includes a dynamic storage unit and a first non-dynamic ...