US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 13 for "3D NAND flash and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,319, issued on May 13, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"3D NAND flash and operation method thereof" was invented by Hongtao Liu (Wuhan, China), Song Min Jiang (Wuhan, China), Dejia Huang (Wuhan, China), Ying Huang (Wuhan, China) and Wenzhe Wei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes wordline (WL) layers and a controller coupled to the WL layers. The controller is configured to apply at least one verify voltage to a first WL layer of the WL layers during a verify phase, and apply a first pass voltage to a second WL layer of the WL layers during the verify phase. A first memor...