US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 4 for "Memory device and program operation thereof" (Chinese Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,597, issued on March 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and program operation thereof" was invented by Weijun Wan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes an array of memory cells and a peripheral circuit coupled to the array of memory cells. At least one of the memory cells is set to one of 2N levels corresponding to a piece of N-bits data, where Nis an integer greater than 1. The peripheral circuit is configured to apply a first program voltage to a select row of the memory cells, perform a first verification of the select row of th...