US Patent Issued to Yangtze Memory Technologies on March 25 for "Method of reducing Vpass disturb in 3D nand systems" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,096, issued on March 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method of reducing Vpass disturb in 3D nand systems" was invented by Jie Yuan (Hubei, China), Ying Cui (Hubei, China), Yuanyuan Min (Hubei, China), YaLi Song (Hubei, China) and HongTao Liu (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a three-dimensional NAND memory device, comprising a NAND string including a memory cell to be inhibited to program, a word line driver, and a controller configured to control the word line driver to perform a programming operation on the memory cell controlled by a selected wor...