US Patent Issued to Yangtze Memory Technologies on March 25 for "Dynamic flash memory (DFM) with multi-cells" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,533, issued on March 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Dynamic flash memory (DFM) with multi-cells" was invented by Tao Yang (Hubei, China), Dongxue Zhao (Hubei, China), Yuancheng Yang (Hubei, China), Lei Liu (Hubei, China), Kun Zhang (Hubei, China), Di Wang (Hubei, China), Wenxi Zhou (Hubei, China), Zhiliang Xia (Hubei, China) and Zongliang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a first memory cell, a second memory cell, a control gate between the first and second memory cells, a top contact coupled to the first memory cell, and a bott...