US Patent Issued to Yangtze Memory Technologies on March 25 for "3D NAND memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,539, issued on March 25, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"3D NAND memory device and method of forming the same" was invented by Yali Song (Hubei, China), Li Hong Xiao (Hubei, China) and Ming Wang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D-NAND memory device is provided. The memory device includes a substrate, a bottom select gate (BSG) disposed over the substrate, a plurality of word lines positioned over the BSG with a staircase configuration and a plurality of insulating layers disposed between the substrate, the BSG, and the plurality of word lines. In the disclosed memory device, one o...