US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 18 for "Three-dimensional memory devices with improved back-side channel structures" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,540, issued on March 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices with improved back-side channel structures" was invented by Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure including interleaved conductive layers and stack dielectric layers, a channel structure extending through the stack structure, and a doped semiconductor la...