US Patent Issued to Yangtze Memory Technologies on March 18 for "Structure and method for isolation of bit-line drivers for a three-dimensional NAND" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,164, issued on March 18, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Structure and method for isolation of bit-line drivers for a three-dimensional NAND" was invented by Liang Chen (Hubei, China), Wei Liu (Hubei, China) and Cheng Gan (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the 3D memory device includes a peripheral circuitry formed on a first substrate. The peripheral circuitry includes a plurality of peripheral devices on a first side of the first substrate, a first interconnect layer, and...