US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 18 for "On-die termination configuration for integrated circuit" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,954, issued on March 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"On-die termination configuration for integrated circuit" was invented by Debo Wei (Wuhan, China), Huangpeng Zhang (Wuhan, China), Jinze Song (Wuhan, China) and Xiaodong Mei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of configuring an on-die termination circuit in each non-volatile memory die of a plurality of non-volatile memory dice that have one or more pads coupled in common, includes determining, by each of the non-volatile memory dice whether that non-volatile memory die is a target or a non-target for a memory operation; s...