US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 18 for "Methods for forming three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,181, issued on March 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Methods for forming three-dimensional memory devices" was invented by Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an example, a method for forming a three-dimensional (3D) memory device is disclosed. A semiconductor layer is formed. A memory stack on the semiconductor is formed. A channel structure extending through the memory stack and the semiconductor layer is formed. An end of the channel structure abutting the semiconductor layer is ...