US Patent Issued to Yangtze Memory Technologies on March 18 for "Memory device including page buffer, memory system including page buffer, and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,951, issued on March 18, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device including page buffer, memory system including page buffer, and operating method thereof" was invented by Yan Wang (Hubei, China) and Xiaojiang Guo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device that includes a memory array and a page buffer. The memory array includes a plurality of memory cells coupled to a bit line of the memory array. The page buffer is coupled to the plurality of memory cells via the bit line to sense stored data in the memory cells. The page buffer includes f...