US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 18 for "Current control circuit and discharge enable circuit for discharging bit lines of memory device and operation method thereof" (Chinese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,956, issued on March 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Current control circuit and discharge enable circuit for discharging bit lines of memory device and operation method thereof" was invented by Liang Qiao (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells, a plurality of bit lines, a current control circuit, and a discharge enable circuit coupled between the current control circuit and a ground. The array of memory cells includes a plurality of columns of memory cells. The plurality of bit lines are respectively coupled to the plurality of columns...