US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on March 18 for "Control method and controller of 3D NAND flash" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,925, issued on March 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Control method and controller of 3D NAND flash" was invented by Ying Huang (Wuhan, China), Hongtao Liu (Wuhan, China), Qiguang Wang (Wuhan, China) and Wenzhe Wei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of programming a memory device including a cell is provided. A first program pulse is applied to the cell. Middle program pulses are applied to the cell after the application of the first program pulse. A last program pulse is applied to the cell after the application of the middle program pulses. A pulse width of the last prog...